zmy3v9 to zmy100 www.vishay.com vishay semiconductors rev. 1.9, 06-dec-11 1 document number: 85788 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 zener diodes features ? silicon planar power zener diodes ? for use in stablilizing and clipping circuits with high power rating ? the zener voltages are graded according to the international e 24 standard. smaller voltage tolerances are available upon request ? these diodes are also available in the do-41 case with the type designation zpy3v9 to zpy100 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition primary characteristics parameter value unit v z range nom. 3.9 to 100 v test current i zt 5 to 100 ma v z specification pulse current int. construction single ordering information device name ordering code taped units per reel minimum order quantity zmy3v9 to zmy100 zmy3v9 to zmy100-series- gs18 5 000 (12 mm tape on 13" reel) 10 000/box zmy3v9 to zmy100 zmy3v9 to zmy100-series- gs08 1 500 (12 mm tape on 7" reel) 12 000/box package package name weight molding compound flammability rating moisture sensitivity level soldering conditions melf do-213ab (glass) 135 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit power dissipation valid provided that electrodes are kept at ambient temperature p tot 1000 mw zener current see table characteristics junction to ambient air valid provided that electrodes are kept at ambient temperature r thja 170 k/w junction to ambient case r thjc 60 k/w junction temperature, maximum t j 175 c storage temperature range t stg - 55 to + 175 c
zmy3v9 to zmy100 www.vishay.com vishay semiconductors rev. 1.9, 06-dec-11 2 document number: 85788 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) valid provided that electrodes are kept at ambient temperature (2) tested with pulses t p = 5 ms electrical characteristics (t amb = 25 c, unless otherwise specified) part number zener voltage range (2) test current reverse voltage dynamic resistance f = 1 khz admissible zener current (1) temperature coefficient of zener voltage v z at i zt1 i zt1 v r at i r z z at i zt1 i z ? vz at i zt1 v ma v a ? ma 10 -4 /c min. nom. max. max. typ. min. max. zmy3v9 3.7 3.9 4.1 100 - 0.5 7 4 203 - 7 2 zmy4v3 4 4.3 4.6 100 - 0.5 7 4 182 - 7 3 zmy4v7 4.4 4.7 5 100 - 0.5 7 4 165 - 7 4 zmy5v1 4.8 5.1 5.4 100 0.7 0.5 5 2 150 - 6 5 zmy5v6 5.2 5.6 6 100 1.5 0.5 2 1 135 - 3 5 zmy6v2 5.8 6.2 6.6 100 2 0.5 2 1 128 - 1 6 zmy6v8 6.4 6.8 7.2 100 3 0.5 2 1 110 0 7 zmy7v5 7 7.5 7.9 100 5 0.5 2 1 100 0 7 zmy8v2 7.7 8.2 8.7 100 6 0.5 21 89 3 8 zmy9v1 8.5 9.1 9.6 50 7 0.5 42 82 3 8 zmy10 9.4 10 10.6 50 7.5 0.5 42 74 5 9 zmy11 10.4 11 11.6 50 8.5 0.5 73 66 5 10 zmy12 11.4 12 12.7 50 9 0.5 73 60 5 10 zmy13 12.4 13 14.1 50 10 0.5 94 55 5 10 zmy15 13.8 15 15.8 50 11 0.5 94 49 5 10 zmy16 15.3 16 17.1 25 12 0.5 10 5 44 7 11 zmy18 16.8 18 19.1 25 14 0.5 11 5 40 7 11 zmy20 18.8 20 21.2 25 15 0.5 12 6 36 7 11 zmy22 20.8 22 23.3 25 17 0.5 13 7 34 7 11 zmy24 22.8 24 25.6 25 18 0.5 14 8 29 7 12 zmy27 25.1 27 28.9 25 20 0.5 15 9 27 7 12 zmy30 28 30 32 25 22.5 0.5 20 10 25 7 12 zmy33 31 33 35 25 25 0.5 20 11 22 7 12 zmy36 34 36 38 10 27 0.5 60 25 20 7 12 zmy39 37 39 41 10 29 0.5 60 30 18 8 12 zmy43 40 43 46 10 32 0.5 80 35 17 8 13 zmy47 44 47 50 10 35 0.5 80 40 15 8 13 zmy51 48 51 54 10 38 0.5 100 45 14 8 13 zmy56 52 56 60 10 42 0.5 100 50 13 8 13 zmy62 58 62 66 10 47 0.5 130 60 11 8 13 zmy68 64 68 72 10 51 0.5 130 65 10 8 13 zmy75 70 75 79 10 56 0.5 160 70 9 8 13 zmy82 77 82 88 10 61 0.5 160 80 8 8 13 zmy91 85 91 96 5 68 0.5 250 120 7.5 9 13 zmy100 94 100 106 5 75 0.5 250 130 7 9 13
zmy3v9 to zmy100 www.vishay.com vishay semiconductors rev. 1.9, 06-dec-11 3 document number: 85788 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - dynamic resistance vs. zener current fig. 2 - dynamic resistance vs. zener current fig. 3 - dynamic resistance vs. zener current fig. 4 - admissible power dissipati on vs. ambient temperature fig. 5 - pulse thermal resistance vs. pulse duration fig. 6 - breakdown characteristics 1 2 10 100 ma 10 3 10 2 1 r zj i z 18312 5 4 325 4 3 2 5 4 3 2 5 4 3 2 5 4 3 10 7 7 zmy5.1 zmy4.3 zmy18 zmy12 zmy7.5 zmy6.2 zmy10 zmy... 1 2 10 100 ma 100 10 1 2 5 4 3 r zj i z 18313 5 4 325 4 3 7 2 5 4 3 7 zmy43 zmy36 zmy30 zmy24 zmy22 zmy... zmy18 zmy... 0.1 2 110 ma 10 3 10 2 10 2 5 4 3 r zj i z 18314 5 4 325 4 3 7 2 5 4 3 7 zmy100 zmy82 zmy68 zmy56 zmy43 0100 200 c 0.8 0.4 0 w p tot t am b 19969 zmy... 1.0 0.6 0.2 10 -5 10 -4 10 -3 10 -2 10 -1 110 s 10 3 10 2 10 1 c/w 2 5 4 3 2 5 4 3 2 5 4 3 r tha t p 18286 t p v = t p i ___ t t p 0.5 0.2 0.1 0.05 0.02 0.01 zmy... v = 0 01234567 8 9 1011 12131415 v 0 40 80 120 160 200 240 ma i z v z 18309 zmy... t j = 25 c test c u rrent l z 100 ma 50 ma zmy4.7 zmy3.9 zmy5.6 zmy6.8 zmy8.2 zmy10 zmy12
zmy3v9 to zmy100 www.vishay.com vishay semiconductors rev. 1.9, 06-dec-11 4 document number: 85788 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - breakdown characteristics fig. 8 - breakdown characteristics package dimensions in millimeters (inches): melf do-213ab (glass) 0 5 101520253035 40 45 50 v 10 20 30 40 50 60 ma i z v z 18310 t j = 25 c zmy... test c u rrent l z 25 ma 10 ma zmy22 zmy18 zmy27 zmy33 zmy15 zmy39 zmy47 0 0 100 200 v 0 10 20 ma i z v z 18311 50 150 test c u rrent l z 10 ma 5 ma tj = 25 c zmy56 zmy68 zmy82 zmy100 zmy... 18317 foot print recommendation: the gap b et w een pl u g and glass can b e either on cathode or anode side cathode identification 4.00 (0.157) max. 1.25 (0.049) min. ref. 6.50 (0.256) 2.6 (0.102) 2.4 (0.094) 0.55 (0.022) 5.2 (0.205) 4.8 (0.189) 3.00 (0.118) min.
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